Datasheet4U Logo Datasheet4U.com

IRLIB4343 - DIGITAL AUDIO MOSFET

General Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications.

This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLI2910 N-Channel MOSFET INCHANGE
IRLI2910PBF N-Channel 100V MOSFET VBsemi
IRLI2910PbF Power MOSFET Infineon
IRLI3705 N-Channel MOSFET INCHANGE
IRLI3705N N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLIB4343PBF DIGITAL AUDIO MOSFET
IRLIB9343 DIGITAL AUDIO MOSFET
IRLIB9343PBF HEXFET Power MOSFET
IRLI2203G POWER MOSFET
IRLI2203N POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95857A DIGITAL AUDIO MOSFET IRLIB4343 Key Parameters Features l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability VDS RDS(ON) typ. @ VGS = 10V RDS(ON) typ. @ VGS = 4.5V Qg typ. TJ max 55 42 57 28 175 V m: m: nC °C D G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.