Datasheet4U Logo Datasheet4U.com

IRL8113PbF - Power MOSFET

Features

  • ified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL8113 N-Channel MOSFET INCHANGE
IRL8113S N-Channel MOSFET INCHANGE
IRL8114 N-Channel MOSFET INCHANGE
IRL80HS120 MOSFET Infineon
IRL1004 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL8113 Power MOSFET
IRL8113L Power MOSFET
IRL8113LPbF Power MOSFET
IRL8113S Power MOSFET
IRL8113SPbF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 95582 IRL8113PbF IRL8113SPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free VDSS 30V IRL8113LPbF HEXFET® Power MOSFET RDS(on) max Qg (Typ.) 6.0m: 23nC Benefits l Low RDS(on) at 4.
Published: |