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IRL8113S - N-Channel MOSFET

Description

Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Provides the designer with an extremely efficient and reliable device for use in a wide variety

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isc N-Channel MOSFET Transistor IRL8113S ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 105 A ID(puls) Pulse Drain Current 420 A Ptot Total Dissipation 110 W Tj Max.
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