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• Lead-Free
PD - 94887
IRL3303PbF
HEXFET Power MOSFET
www.irf.com
1 12/11/03
IRL3303PbF
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IRL3303PbF
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IRL3303PbF
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IRL3303PbF
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IRL3303PbF
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IRL3303PbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane • Low Leakage Inductance
Current Transformer
-
- +
• dv/dt controlled by RG • Driver same type as D.U.T.
• ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
+ - VDD
Driver Gate Drive
P.W.
Period
D=
P.W. Period
VGS=10V *
D.U.T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D.U.T.
IRL3303PBF Datasheet
