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IRL3303LPBF - Power MOSFET

Download the IRL3303LPBF datasheet PDF. This datasheet also covers the IRL3303SPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.026Ω PD - 95578 G ID = 38A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced

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Note: The manufacturer provides a single datasheet file (IRL3303SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3303L HEXFET Power MOSFET
IRL3303 HEXFET POWER MOSFET
IRL3303PBF Power MOSFET
IRL3303S HEXFET Power MOSFET
IRL3303SPBF Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.026Ω PD - 95578 G ID = 38A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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