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IRHQ9110 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHQ3110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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IRHQ4110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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PD - 93794C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID -2.3A -2.3A IRHQ9110 100V, QUAD P-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.