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IRHQ6110 - (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHQ63110 (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3214 (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4214 (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).