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IRHNA8160 - N-CHANNEL TRANSISTOR

Download the IRHNA8160 datasheet PDF. This datasheet also covers the IRHNA7160 variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHNA7160_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNA8064 N-CHANNEL TRANSISTOR
IRHNA8260 N-CHANNEL TRANSISTOR
IRHNA53064 RADIATION HARDENED POWER MOSFET
IRHNA53160 RADIATION HARDENED POWER MOSFET
IRHNA53260 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHNA7160 IRHNA8160 N-CHANNEL MEGA RAD HARD 100 Volt, 0.045 Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.