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IRHNA53160 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHNA53064 RADIATION HARDENED POWER MOSFET
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IRHNA54160 RADIATION HARDENED POWER MOSFET

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 91860H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) IRHNA53160 IRHNA54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.012Ω 0.012Ω 0.012Ω 0.013Ω IRHNA57160 JANSR2N7469U2 100V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY ™ ID QPL Part Number 75*A JANSR2N7469U2 75*A JANSF2N7469U2 75*A JANSG2N7469U2 75*A JANSH2N7469U2 IRHNA58160 1000K Rads (Si) SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).