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IRHNA53Z60 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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IRHNA53064 RADIATION HARDENED POWER MOSFET
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www.DataSheet4U.com PD - 91787H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) IRHNA54Z60 500K Rads (Si) RDS(on) ID 0.0035Ω 75A* 0.0035Ω 75A* 0.0035Ω 75A* 75A* IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ QPL Part Number JANSR2N7467U2 JANSF2N7467U2 JANSG2N7467U2 JANSH2N7467U2 IRHNA58Z60 1000K Rads (Si) 0.0040Ω SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).