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IRHLF73110 - (IRHLF77110 / IRHLF73110) POWER MOSFET

This page provides the datasheet information for the IRHLF73110, a member of the IRHLF77110 (IRHLF77110 / IRHLF73110) POWER MOSFET family.

Features

  • n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche En.

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Datasheet Details

Part number IRHLF73110
Manufacturer International Rectifier
File Size 232.99 KB
Description (IRHLF77110 / IRHLF73110) POWER MOSFET
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Full PDF Text Transcription

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www.DataSheet4U.com PD-97062 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) IRHLF77110 100K Rads (Si) 0.30Ω IRHLF73110 300K Rads (Si) 0.30Ω ID 6.0A 6.0A IRHLF77110 100V, N-CHANNEL TECHNOLOGY ™ T0-39 International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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