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IRHF7330SE - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF7310SE N-CHANNEL TRANSISTOR
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www.DataSheet4U.com PD-91864B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF) Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY ™ ® RDS(on) ID QPL Part Number 1.39Ω 2.9A JANSR2N7463T2 TO-205AF International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.