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IRHF7230 - Radiation Hardened Power MOSFET

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 250V.
  • ID : 5.5A.
  • RDS(on),max : 0.35.
  • QG, max: 50nC.
  • REF: MIL-PRF-19500/601 Potential.

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Other Datasheets by International Rectifier (now Infineon)

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IRHF7110 RADIATION HARDENED POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRHF7230 (JANSR2N7262) Radiation Hardened Power MOSFET Thru-Hole TO-205AF (TO-39) 200V, 5.5A, N-channel, Rad Hard HEXFET™ Technology PD-90672H Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 250V  ID : 5.5A  RDS(on),max : 0.35  QG, max: 50nC  REF: MIL-PRF-19500/601 Potential Applications  DC-DC converter  Motor drives Product Validation TO-39 Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.