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IRHF57234SE - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gat.

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Part Number Description
IRHF57230 RADIATION GARDENED POWER MOSFET
IRHF57230SE RADIATION GARDENED POWER MOSFET
IRHF57034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
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www.DataSheet4U.com PD - 93831A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57234SE 100K Rads (Si) RDS(on) 0.42Ω IRHF57234SE JANSR2N7499T2 250V, N-CHANNEL REF: MIL-PRF-19500/706 5 TECHNOLOGY ™ ID QPL Part Number 5.2A JANSR2N7499T2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.