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IRHF57230 - RADIATION GARDENED POWER MOSFET

Download the IRHF57230 datasheet PDF. This datasheet also covers the IRHF53230 variant, as both devices belong to the same radiation gardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

Key Features

  • Single Event Effect (SEE) Hardened.
  • Ultra Low RDS(on).
  • Neutron Tolerant.
  • Identical Pre- and Post-Electrical Test Conditions.
  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Ratings.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C IDM @ TC = 25°C PD @ TC = 25°C VGS EAS IAR EAR d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHF53230_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) Product Summary Part Number Radiation Level IRHF57230 100 kRads(Si) IRHF53230 300 kRads(Si) IRHF54230 600 kRads(Si) IRHF58230 1000 kRads(Si) RDS(on) 0.22 0.22 0.22 0.275 ID 7.3A 7.3A 7.3A 7.3A Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.