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IRHF54130 - RADIATION HARDENED POWER MOSFET

Download the IRHF54130 datasheet PDF. This datasheet also covers the IRHF53130 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHF53130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRH-12-12.5-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-24-6.3-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-5-30-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF54034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF54230 RADIATION HARDENED POWER MOSFET
IRHF53034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF53130 RADIATION HARDENED POWER MOSFET
IRHF53230 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 93789A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08Ω 0.08Ω 0.08Ω 0.10Ω ID 11.7A 11.7A 11.7A 11.7A IRHF57130 100V, N-CHANNEL R5 TECHNOLOGY ™ TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.