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IRHF54034 - (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE

Download the IRHF54034 datasheet PDF. This datasheet also covers the IRHF53034 variant, as both devices belong to the same (irhf5x034) radiation hardened power mosfet thru-hole family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHF53034_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF54130 RADIATION HARDENED POWER MOSFET
IRHF54230 RADIATION HARDENED POWER MOSFET
IRHF53034 (IRHF5x034) RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF53130 RADIATION HARDENED POWER MOSFET
IRHF53230 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 93791D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF57034 IRHF53034 IRHF54034 Radiation Level RDS(on) 100K Rads (Si) 0.048Ω 300K Rads (Si) 0.048Ω 500K Rads (Si) 0.048Ω 0.060Ω IRHF57034 JANSR2N7492T2 60V, N-CHANNEL REF: MIL-PRF-19500/701 5 TECHNOLOGY ™ ID QPL Part Number 12A* JANSR2N7492T2 12A* JANSF2N7492T2 12A* JANSG2N7492T2 12A* JANSH2N7492T2 IRHF58034 1000K Rads (Si) International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).