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IRGSL8B60KPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL8B60KPbF datasheet PDF. This datasheet also covers the IRGB8B60KPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB8B60KPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95645A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB D2Pak IRGB8B60KPbF IRGS8B60K TO-262 IRGSL8B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.