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IRGSL15B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL15B60KD datasheet PDF. This datasheet also covers the IRGB15B60KD variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology. www. DataSheet4U. com.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB15B60KD_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40LPBF IGBT

Full PDF Text Transcription

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PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.
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