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IRGS15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS15B60KDPbF datasheet PDF. This datasheet also covers the IRGB15B60KDPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Tran.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB15B60KDPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGS10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGS14C40L INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
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