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IRGP4790D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4790D-EPbF datasheet PDF (IRGP4790DPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for insulated gate bipolar transistor.

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF  TO‐247AC  C Collector E GC IRGP4790D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

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Note: The manufacturer provides a single datasheet file (IRGP4790DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
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