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IRGMIC50U - Ultra Fast Speed IGBT

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A.

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www.DataSheet4U.com PD -90813A IRGMIC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Features • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A Description n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency.