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IRGMC30F - INSULATED GATE BIPOLAR TRANSISTOR

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.1V @VGE = 15V, IC = 12A.

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Other Datasheets by International Rectifier (now Infineon)

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IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR
IRGMC40F 600V Discrete Hi-rel Igbt
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www.DataSheet4U.com PD -90714B IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.1V @VGE = 15V, IC = 12A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency.