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IRG7PK35UD1-EPbF - Insulated Gate Bipolar Transistor

Download the IRG7PK35UD1-EPbF datasheet PDF. This datasheet also covers the IRG7PK35UD1PbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON), ultra-low VF, and turn-off soft switching losses Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant Benefits High efficiency in a wide range of soft switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PK35UD1PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.
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