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IRG4RC10UD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • C UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 2.15V.
  • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
  • IGBT co-packaged with.

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PD 91571A IRG4RC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 2.15V • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .
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