Datasheet4U Logo Datasheet4U.com

IRG4RC10U - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
  • Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified ap.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4RC10UD INSULATED GATE BIPOLAR TRANSISTOR
IRG4RC10UDPBF UltraFast CoPack IGBT
IRG4RC10UPBF UltraFast speed IGBT
IRG4RC10K INSULATED GATE BIPOLAR TRANSISTO
IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTO

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91572A IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.
Published: |