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PD -95557
IRG4PC30KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free
Short Circuit Rated UltraFast IGBT
C
High short circuit rating optimized for motor control,
Features
VCES = 600V
G E
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
n-channel
Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs.
IRG4PC30KDPBF Datasheet
