Datasheet4U Logo Datasheet4U.com

IRG4PC30F - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4PC40F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40KD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4PC40S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4PC30FD INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30FPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30K INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
Published: |