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IRG4MC50F - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 30A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

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www.DataSheet4U.com PD -94274A IRG4MC50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.