Datasheet4U Logo Datasheet4U.com

IRG4MC30F - Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • C.
  • Electrically Isolated and Hermetically Sealed.
  • Simple Drive Requirements.
  • Latch-proof.
  • Fast Speed Operation 3 kHz - 8 kHz.
  • High Operating Frequency.
  • Switching-loss Rating includes all "tail" losses.
  • Ceramic Eyelets G E n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4MC40U INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC50F INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC50U INSULATED GATE BIPOLAR TRANSISTOR
IRG41BC10UDPBF Insulated Gate Bipolar Transistor
IRG41BC30UD Ultra Fast CoPack IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INSULATED GATE BIPOLAR TRANSISTOR PD-94313D IRG4MC30F Fast Speed IGBT Features C • Electrically Isolated and Hermetically Sealed • Simple Drive Requirements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz • High Operating Frequency • Switching-loss Rating includes all "tail" losses • Ceramic Eyelets G E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.