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IRG4BC30S-S - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz).
  • Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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PD - 94069 IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.