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IRG4BC30FD-S - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with.

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www.DataSheet4U.com PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing.
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