Datasheet4U Logo Datasheet4U.com

IRFU3707ZCPBF - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU3707ZCPBF, a member of the IRFR3707ZCPBF HEXFET Power MOSFET family.

Features

  • d +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver be.

📥 Download Datasheet

Datasheet preview – IRFU3707ZCPBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96045 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRFR3707ZCPbF IRFU3707ZCPbF HEXFET® Power MOSFET VDSS RDS(on) max 30V 9.5m: Qg 9.6nC D-Pak IRFR3707ZCPbF I-Pak IRFU3707ZCPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 56 39 Units V A ™ f f 220 50 25 0.33 -55 to + 175 300 (1.
Published: |