dissipated primarily in Q1.
Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1.
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m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification
l l l
PD - 95443A
IRFR3707ZPbF IRFU3707ZPbF
HEXFET® Power MOSFET
for Telecom and Industrial Use Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
VDS VGS
ID @ TC = 25°C IDM
ID @ TC = 100°C PD @TC = 25°C
PD @TC = 100°C TJ TSTG
Thermal Resistance
RθJC RθJA RθJA
m o .c U 4 t e e h S a t a .D w w w
30V 9.5m:
D-Pak IRFR3707Z
Parameter Max.
IRFR3707ZPBF Datasheet
