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IRFR3707 - Power MOSFET

Key Features

  • 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) 2 3 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 3X 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 3X 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) M A M B 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 93934B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRFR3707 IRFU3707 HEXFET® Power MOSFET VDSS 30V RDS(on) max 13mΩ ID 61A„ High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRFR3707 I-Pak IRFU3707 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range