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IRFI9634G - Power MOSFET

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Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swit

Features

  • ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .10 (.2 8 0 ) 6 .70 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5 ) M IN. 1 2 3 N O TE S : 1 D IM E N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S ION : IN C H . 3.3 0 (.1 30 ) 3.1 0 (.1 22 ) -B 1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 3X 1 .4 0 (.0 5 5) 1 .0 5 (.0 4 2) 0 .9 0.

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PD - 9.1488 PRELIMINARY l l l l l l IRFI9634G HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -250V RDS(on) = 1.0Ω G ID = -4.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
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