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IRFI9630G - Power MOSFET

Datasheet Summary

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • P-channel.
  • Dynamic dV/dt rating.
  • Low thermal resistance.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number IRFI9630G
Manufacturer Vishay
File Size 946.79 KB
Description Power MOSFET
Datasheet download datasheet IRFI9630G Datasheet
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Full PDF Text Transcription

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www.vishay.com IRFI9630G Vishay Siliconix Power MOSFET TO-220 FULLPAK S G S GD D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -200 VGS = -10 V 29 5.4 15 Single 0.80 FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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