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IRFH7787PBF - Power MOSFET

Features

  • he Energy (mJ) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Avalanche Current vs. Pulse Width 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle 100 ID = 41A 80 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at.

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Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters   Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant StrongIRFET™ IRFH7787PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 75V 6.6m 8.
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