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IRFH7085PBF - Power MOSFET

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Features

  • SPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) 0.1 1 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and 100 Tstart =25°C (Single Pulse) 10 Avalanche Current (A) EAR , Avalanche Energy (mJ) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C.

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Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters   Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant  StrongIRFET™ IRFH7085PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 60V 2.6m 3.2m 147A 100A    PQFN 5X6 mm Base part number Package Type    IRFH7085PbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7085TRPbF RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 8.0 ID = 75A 7.0 6.0 5.0 TJ = 125°C 4.0 3.
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