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IRFH4234PBF - Power MOSFET

Datasheet Summary

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers

Features

  • Low Charge (typical 8.2 nC) Low RDSon (.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 4.6 7.3 8.2 60 V m nC A   Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low Charge (typical 8.2 nC) Low RDSon (<4.6 m) Low Thermal Resistance to PCB (<4.6 °C/W) Low Profile (<0.
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