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IRFH4213DPbF - Power MOSFET

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Features

  • Low RDSon (.

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IRFH4213DPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 25 100 nC A PQFN 5X6 mm V m Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Low RDSon (<1.35m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.3°C/W) Low Profile (<0.
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