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IRFB5615PbF - Digital Audio MOSFET

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Key Parameters Optimized for Class-D Audio Amplifier.

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Full PDF Text Transcription

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DIGITAL AUDIO MOSFET PD - 96173 IRFB5615PbF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 300W per Channel into 4Ω Load in Half-Bridge Configuration Amplifier Key Parameters VDS 150 RDS(ON) typ. @ 10V 32 Qg typ. Qsw typ. RG(int) typ. 26 11 2.7 TJ max 175 DD V m: nC nC Ω °C G S S D G TO-220AB GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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