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IRFB5620 - N-Channel MOSFET

Features

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  • Static drain-source on-resistance: RDS(on) ≤72.5mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFB5620，IIRFB5620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and repetitive avalanche capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 144 Tj Max.
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