Datasheet4U Logo Datasheet4U.com

IRF9953PBF - Power MOSFET

Description

l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.25Ω 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9130 P-Channel Power MOSFET Samsung semiconductor
IRF9130 P-Channel Power MOSFET Seme LAB
IRF9130 P-Channel Power MOSFET Intersil Corporation
IRF9130SMD P-Channel Power MOSFET Seme LAB
IRF9131 P-Channel Power MOSFET Samsung semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF9953 Power MOSFET
IRF9952 Power MOSFET
IRF9952PBF HEXFET Power MOSFET
IRF9952QPBF Power MOSFET
IRF9956 Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.25Ω 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Published: |