IRF9130
FEATURES
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
- 100V
- 11A 0.2W
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060)
- HERMETICALLY SEALED TO- 3 METAL PACKAGE
- SIMPLE DRIVE REQUIREMENTS
- SCREENING OPTIONS AVAILABLE
1.09 (0.043) 0.97 (0.038) dia. 2 plcs.
TO- 3 Metal Package
Pin 1
- Gate Pin 2
- Source Case
- Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate
- Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
12.07 (0.475) 11.30 (0.445)
±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C)
- 11A
- 7.0A
- 50A 75W 0.6W/°C
Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current
81m J
- 11A 7.5m J
- 5.5V/ns
- 55 to +150°C 300°C
Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature...
