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IRF9395MTRPBF - HEXFET Power MOSFET

Download the IRF9395MTRPBF datasheet PDF. This datasheet also covers the IRF9395MPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT D S S S S D MC MP MC DirectFET ™.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF9395MPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF9358 Dual P-Channel HEXFET Power MOSFET Infineon
IRF9358PbF Dual P-Channel HEXFET Power MOSFET Infineon
IRF9388PbF Power MOSFET Infineon
IRF9130 P-Channel Power MOSFET Samsung semiconductor
IRF9130 P-Channel Power MOSFET Seme LAB

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF9395MPBF HEXFET Power MOSFET
IRF9392PbF HEXFET Power MOSFET
IRF9392TRPbF HEXFET Power MOSFET
IRF9393 Power MOSFET
IRF9393PbF Power MOSFET

Full PDF Text Transcription

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PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS Applications l Isolation Switch for Input Power or Battery Application VGS Qgd 15nC RDS(on) Qoss 23nC -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Qg tot 32nC Qrr 62nC Vgs(th) -1.8V Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.
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