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IRF8252PBF - 25V Single N-Channel HEXFET Power MOSFET

Description

The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8252PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

Features

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 96158 IRF8252PbF Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l HEXFET® Power MOSFET VDSS 25V 2.7m:@VGS = 10V 35nC A A D D D D RDS(on) max Qg Benefits l l l l l l l l Very Low Gate Charge Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating 100% tested for Rg RoHS Compliant (Halogen Free) Low Thermal Resistance S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Description The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
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