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IRF7811AVPbF - N-Channel Application-Specific MOSFETs

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7811AVPBF-1 Power MOSFET
IRF7811AV N-Channel Application-Specific MOSFET
IRF7811A N-Channel Power MOSFET
IRF7811APBF HEXFET Power MOSFET
IRF7811 HEXFET

Full PDF Text Transcription

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IRF7811APVD-P95b26F5 IRF7811AVPbF • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
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