IRF7807D1PBF - HEXFET Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7807D1PBF
Manufacturer	International Rectifier
File Size	171.05 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7807D1PBF Datasheet
Additional preview pages of the IRF7807D1PBF datasheet.

Product details

Description

The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.

Features

(Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www. irf. com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage.
Static Drain-Source on Resistance.
Drain-Source Leakage Current.
Gate-Source Leakage Current.
Total Gate Charge Synch FET.
Total Gate Charge Control FET.
Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge.

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Other Datasheets by International Rectifier

IRF7807D1 - MOSFET
IRF7807D2 - MOSFET
IRF7807D2PbF - MOSFET / SCHOTTKY DIODE
IRF7807 - N-Channel Power MOSFET
IRF7807A - N-Channel Power MOSFET
IRF7807APbF - HEXFET Chip-Set for DC-DC Converters

Published: May 30, 2007 |