Datasheet Details
| Part number | IRF7799L2TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 328.57 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7799L2TRPBF Datasheet
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Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- = 175°C Single Pulse 10msec 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 VGS(th) , Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 ID, Drain Current (A) 30 5.0 4.0 20 3.0 ID = 250µA 2.0 ID = 1.0mA ID = 1.0A 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ).